Abstract − Analytical Sciences, 14(5), 987 (1998).
Atomic-Resolution X-Ray Fluorescence Holography of Zn (0.02 wt%) in a GaAs Wafer
Kouichi HAYASHI*1 , Tokujirou YAMAMOTO*1 , Jun KAWAI*1 , Motohiro SUZUKI*2 , Shunji GOTO*3 Shinjiro HAYAKAWA*4 , Kenji SAKURAI*5 and Yohichi GOHSHI*6
*1 Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan
*2 Harima Institute, The Institute of Physical and Chemical Research (RIKEN), Mikazuki-cho, Sayo-gun, Hyogo 679-5143, Japan
*3 Japan Synchrotron Research Institute, SPring-8, Mikazuki-cho, Sayo-gun, Hyogo 679-5198, Japan
*4 Department of Applied Chemistry, School of Engineering, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
*5 National Research Institute for Metals, Sengen, Tsukuba 305-0047, Japan
*6 National Institute for Environmental Study, Onogawa, Tsukuba 305-0053, Japan
*2 Harima Institute, The Institute of Physical and Chemical Research (RIKEN), Mikazuki-cho, Sayo-gun, Hyogo 679-5143, Japan
*3 Japan Synchrotron Research Institute, SPring-8, Mikazuki-cho, Sayo-gun, Hyogo 679-5198, Japan
*4 Department of Applied Chemistry, School of Engineering, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
*5 National Research Institute for Metals, Sengen, Tsukuba 305-0047, Japan
*6 National Institute for Environmental Study, Onogawa, Tsukuba 305-0053, Japan
Keywords X-Ray fluorescence, multiple energy X-ray holography, GaAs wafer, dopant, synchrotron radiation, local structure
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